Semiconducting Materials & Devices Laboratory, Kyushu University

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744 Motooka, Nishi-ku, Fukuoka 819-0395
Graduate School of Information Science and Electrical Engineering, Kyushu University
TEL:092-642-2111
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Research on Novel Semiconductor Materials/Devices for Sustainable Futures
Drastic advancements in AI and IoT not only increase network load but also raises serious concerns about energy consumption. Digital transformation (DX) is now becoming an inhibiting factor in climate change mitigation efforts. As the device dimension is scaled down, resistances (R) and capacitances (C) in electrical wiring increase, dominating the device performance and the power consumption. “Optical wiring” thus have regained a huge interest since there is no power consumption due to Joule heating and no signal delay due to RC delay.

Exciton transistors are expected to realize "on-chip" optical interconnect

The bottleneck for optical wiring is in electro-optical (E/O) signal converters. Conventional E-O converters have a trade-off relationship between operating speed and integration capability. Exciton transistors (EXOTs) are expected to break the trade-off. But there are three challenges in EXOTs: increasing operating temperature, increasing exciton lifetime, and increasing exciton mobility

- Key Technologies Developed in Our Lab -
1. New semiconductor materials “ZAION”: ZnO-AlInN pseudobinary alloy
Besides the tunable band gaps (1.5 - 6.0 eV), one of the important features of ZAION is the exciton binding energy that is neither too high nor too low (30-60 meV), enabling generation of high-mobility & RT-stable excitons.
2. Heterogeneous and monolithic 3D integration technology
To integrate an optical layer onto an electrical layer, crystal growth technique that enables growth of single crystalline films even on large lattice mismatched materials is essential. We have developed a new growth method using “inverted Starnski-Krastanov(SK)mode” for such integration.
Publications
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