九州大学 電子材料工学研究室 (ITAGAKI LAB)

論文Proceedings基調講演招待講演特許 表彰

論文

  1. Effects of sputtering gas pressure dependence of surface morphology of ZnO films fabricated via nitrogen mediated crystallizationK. Iwasaki, K. Matsushima, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki , MRS Advances(2017) In Press
  2. Blue Photoluminescence of (ZnO)0.92(InN)0.08K. Matsushima, K. Iwasaki, N. Miyahara, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki, MRS Advances(2017) In Press
  3. Hysteresis in volume fraction of clusters incorporated into a-Si:H films deposited by SiH4 plasma chemical vapor deposition, S. Toko, K. Keya, Y. Torigoe, T. Kojima, H. Seo, N. Itagaki, K. Koga, M. Shiratani, Surf. Coat. Technol. (IVC-20)(2017) In Press
  4. Low temperature rapid formation of Au-induced crystalline Ge films using sputtering deposition, S. Tanami, D. Ichida, S. Hashimoto, H. Seo, D. Yamashita, N. Itagaki, K. Koga, M. Shiratani, Thin Solid Films (2017) In Press
  5. Densities and surface reaction probabilities of oxygen and nitrogen atoms during sputter deposition of ZnInON on ZnO, K. Matsushima, T. Ide, K. Takeda, M. Hori, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki, IEEE Trans. Plasma Science, 45, 2, 323-327(2017)
  6. Fluctuation of Position and Energy of a Fine Particle in Plasma Nanofabrication, M. Shiratani, M. Soejima, H. Seo, N. Itagaki, K. Koga, Materials Science Forum, 879, 1772-1777 (2016)
  7. Surface Modification of Polymer Counter Electrode for Low Cost Dye-sensitized Solar Cells, H. Seo, M. K. Son, S. Hashimoto, T. Takasaki, N. Itagaki, K. Koga, M. Shiratani, Electrochimica Acta, 210, 880-887(2016)
  8. Effect of Sulfur Doped TiO2 on Photovoltaic Properties of Dye-Sensitized Solar Cells, H. Seo, S. H. Nam, N. Itagaki, K. Koga, M. Shiratani, and J.-H. Boo, Electron. Mater. Lett., 12, 4, 530-536(2016)
  9. Optoelectronic properties of valence-statecontrolled amorphous niobium oxide, T. Onozato, T. Katase, A. Yamamoto, S. Katayama, K. Matsushima, N. Itagaki, H. Yoshida, H. Ohta, J. Phys.: Condens. Matter, 28, 255001(2016)
  10. Improvement of Charge Transportation in Si Quantum Dot-Sensitized Solar Cells Using Vanadium Doped TiO2, H. Seo, D. Ichida, S. Hashimoto, N. Itagaki, K. Koga, M. Shiratani, S. H. Nam and J. H. Boo, J. Nanosci. Nanotechnol., 16, 5, 4875-4879(2016)
  11. Quantum Characterization of Si Nano-Particles Fabricated by Multi-Hollow Discharge Plasma Chemical Vapor Deposition, H. Seo, G. Uchida, N. Itagaki, K. Koga, and M. Shiratani, Science of Advanced Materials, 8, 3, 636-639(2016)
  12. Polymer Counter Electrode of Poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) Containing TiO2 Nano-particles for Dye-sensitized Solar Cells, H. Seo, M.-K. Son, N. Itagaki, K. Koga, M. Shiratani, Journal of Power Sources, 307, 25-30(2016)
  13. Room Temperature Fabrication of (ZnO)x(InN)1-x films with Step-Terrace Structure by RF Magnetron Sputtering, K. Matsushima, T. Ide, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki, MRS Advances, 1, 2, 115-119(2016)
  14. 水素プラズマとカーボン壁の相互作用で発生したダストに対するダスト除去フィルタのダスト除去性能評価, 白谷正治, 古閑一憲, 立石瑞樹, 片山龍, 山下大輔, 鎌滝晋礼, 徐鉉雄, 板垣奈穂, 芦川直子, 時谷政行, 増崎貴, 西村清彦, 相良明男, LHD実験グループ, 九州大学超顕微解析研究センター報告, 39, 116-117(2015)
  15. Simple method of improving harvest by nonthermal air plasma irradiation of seeds of Arabidopsis thaliana (L.), K. Koga, T. Sarinont, T. Amano, H. Seo, N. Itagaki, N. Hayashi, M. Shiratani, Appl. Phys. Express, 9, 016201(2015)
  16. Effects of Gas Flow Rate on Deposition Rate and Amount of Si Clusters Incorporated into a-Si:H Films, S. Toko, Y. Torigoe, K. Keya, H. Seo, N. Itagaki, K. Koga, and M. Shiratani, Jpn. J. Appl. Phys., 55, 1S, 01AA19(2015)
  17. Effects of deposition rate and ion bombardment on properties of a-C:H films deposited by H-assisted plasma CVD method, X. Dong, K. Koga, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori, Jpn. J. Appl. Phys., 55, 1S, 01AA11(2015)
  18. Structural alternation of tandem dye-sensitized solar cells based on mesh-type of counter electrode, H. Seo, S. Hashimoto, D. Ichida, N. Itagaki, K. Koga and M. Shiratani , Electrochimica Acta, 179, 206-210(2015)
  19. Real-time mass measurement of dust particles deposited on vessel wall in a divertor simulator using quartz crystal microbalances, M. Tateishi, K. Koga, R. Katayama, D. Yamashita, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura, A. Sagara, and the LHD Experiment Group, J. Nucl. Mater., 463, 865–868(2015)
  20. Effects of cluster incorporation into hydrogenated amorphous silicon films in initial discharge phase on film stability, S. Toko, Y. Torigoe, W. Chen, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani, Thin Solid Films, 587, 126-131(2015)
  21. Effects of discharge voltage on the characteristics of a-C:H films prepared by H-assisted Plasma CVD method, X. Dong, K. Koga, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori, Trans. Mater. Res. Soc. Jpn., 40, 2, 123-128(2015)
  22. Fabrication of ZnInON/ZnO multi-quantum well solar cells, K. Matsushima, R. Shimizu, T. Ide, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki, Thin Solid Films, 587, 106-111(2015)
  23. Photovoltaic application of Si nanoparticles fabricated by multihollow plasma discharge CVD: Dye and Si co-sensitized solar cells, H. Seo, D. Ichida, S. Hashimoto, G. Uchida, N. Itagaki, K. Koga, and M. Shiratani, Jpn. J. Appl. Phys., 54, 1S, 01AD02(2015)
  24. Synthesis and characterization of ZnInON semiconductor: a ZnO-based compound with tunable band gap, N. Itagaki, K. Matsushima, D. Yamashia, H. Seo, K. Koga, M. Shiratani, Mater. Res. Express, 1, 3, 036405(2014)
  25. Growth mechanism of ZnO deposited by nitrogen mediated crystallization, I. Suhariadi, M. Shiratani, N. Itagaki, Mater. Res. Express, 1, 3, 036403(2014)
  26. Performance enhancement of dye and Si quantum dot hybrid nanostructured solar cell with TiO2 barrier, H. Seo, D. Ichida, S. Hashimoto, G. Uchida, N. Itagaki, K. Koga, and M. Shiratani, Trans. Mater. Res. Soc. Jpn., 39, 3, 321-324(2014)
  27. Off-axis sputter deposition of ZnO films on c-sapphire substrates by utilizing nitrogen-mediated crystallization method, N. Itagaki, K. Kuwahara, K. Matsushima, D. Yamashita, H. Seo, K. Koga, M. Shiratani, Opt. Engineering, 53, 8, 087109(2014)
  28. Infrared Plasmonics via ZnO, J. W. Allen, M. S. Allen, D. C. Look, B. R. Wenner, N. Itagaki, K. Matsushima, I. Surhariadi, J. Nano Res., 8, 109(2014)
  29. Nanostructure Control of Si and Ge Quantum Dots Based Solar Cells Using Plasma Processes, M. Shiratani, G. Uchida, H. Seo, D. Ichida, K. Koga, N. Itagaki, and K. Kamataki, Materials Science Forum, 783-786, 2022-2027(2014)
  30. スパッタリング成膜法による高品質酸化亜鉛薄膜の形成, 板垣奈穂、古閑一憲、白谷正治, 応用物理, 83, 5, 385-389(2014)
  31. Performance dependence of Si quantum dot-sensitized solar cells on counter electrode, H. Seo, D. Ichida, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, Jpn. J. Appl. Phys., 53, 5S1, 05FZ01(2014)
  32. Electrochemical impedance analysis on the additional layers for the enhancement on the performance of dye-sensitized solar cell, H. Seo, M. Son, S. Park, M. Jeong, H. Kim, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, Thin Solid Films, 554, 122-126(2014)
  33. Analysis on the photovoltaic property of Si quantum dot-sensitized solar cells, H. Seo, D. Ichida, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Int. J. Precision Eng. Manuf., 15, 2, 339-343(2014)
  34. Theory for correlation between plasma fluctuation and fluctuation of nanoparticle growth in reactive plasmas, M. Shiratani, K. Koga, K. Kamataki, S. Iwashita, G. Uchida, H. Seo, and N. Itagaki, Jpn. J. Appl. Phys., 53, 1, 010201(2014)
  35. Characteristics of Crystalline Silicon/Si Quantum Dot/Poly(3,4-ethylenedioxythiophene) Hybrid Solar Cells, G. Uchida, Y. Wang, D. Ichida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Jpn. J. Appl. Phys., 52, 11NA05(2013)
  36. Correlation between Volume Fraction of Silicon Clusters in Amorphous Silicon Films and Optical Emission Properties of Si and SiH, Y. Kim, K. Hatozaki, Y. Hashimoto, G. Uchida, K. Kamataki, N. Itagaki, H. Seo, K. Koga, and M. Shiratani, Jpn. J. Appl. Phys., 52, 11NA07(2013)
  37. Flux Control of Carbon Nanoparticles Generated due to Interactions between Hydrogen Plasmas and Graphite Using DC-Biased Substrates, K. Koga, M. Tateishi, K. Nishiyama, G. Uchida, K. Kamataki, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Muzaki, K. Nishimura, Akiko Sagara, the LHD Experimental Group, Jpn. J. Appl. Phys., 52, 11NA08(2013)
  38. Improvement on the Electron Transfer of Dye-Sensitized Solar Cell Using Vanadium Doped TiO2, H. Seo, Y. Wang, D. Ichida, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, S. Nam, J. Boo, Jpn. J. Appl. Phys., 52, 11NM02(2013)
  39. Epitaxial Growth of ZnInON Films with Tunable Band Gap from 1.7 eV to 3.3 eV on ZnO Templates, K. Matsushima, T. Hirose, K. Kuwahara, D. Yamashita, G. Uchida, H. Seo, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki, Jpn. J. Appl. Phys., 52, 11NM06(2013)
  40. The improvement on the performance of quantum dot-sensitized solar cells with functionalized Si, H. Seo, Y. Wang, M. Sato, G. Uchida, K. Koga, N. Itagaki, K. Kamataki, M. Shiratani, Thin Solid Films, 546, 284-288(2013)
  41. Effects of Nitrogen on Crystal Growth of Sputter-Deposited ZnO Films for Transparent Conducting Oxide, I. Suhariadi, K. Oshikawa, K. Kuwahara, K. Matsushima, D. Yamashita, G. Uchida, K. Koga, M. Shiratani, N. Itagaki, Jpn. J. Appl. Phys., 52, 11NB03(2013)
  42. Study on the Fabrication of Paint-Type Si Quantum Dot-Sensitized Solar Cells, H. Seo, M. Son, H. Kim, Y. Wang, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Jpn. J. Appl. Phys., 57, 10MB07(5pages) (2013)
  43. Characteristics of photocurrent generation in the near-ultraviolet region in Si quantum-dot sensitized solar cells, G. Uchida, M. Sato, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Thin Solid Films, 544, 93-98(2013)
  44. ナノ材料のプラズマプロセシングの研究の現状と将来 , 白谷正治, 古閑一憲, 内田儀一郎, Hyunwoong Seo, 板垣奈穂, 岩下伸也, 表面科学, 34, 10, 520(2013)
  45. Effects of nanoparticle incorporation on properties of microcrystalline films deposited using multi-hollow discharge plasma CVD, Y. Kim, T. Matsunaga, K. Nakahara, H. Seo, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, Surf. Coat. Technol., 228, 1, S550–S553(2013)
  46. Discharge power dependence of carbon dust flux in a divertor simulator, K. Nishiyama, Y. Morita, G. Uchida, D. Yamashita, K. Kamataki, H. Seo, N. Itagaki, K. Koga, M. Shiratani, N. Ashikawa, S. Muzaki, K. Nishimura, A. Sagara, the LHD Experimental Group, S. Bornholdt, and H. Kersten, J. Nucl. Mater., 438, S788–S791(2013)
  47. Effects of DC Substrate Bias Voltage on Dust Flux in the Large Helical Device, K. Koga, K. Nishiyama, Y. Morita, G. Uchida, D. Yamashita, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Muzaki, K. Nishimura, A. Sagara, and the LHD Experimental Group, J. Nucl. Mater., 438, S727–S730(2013)
  48. Analysis on the effect of polysulfide electrolyte composition for higher performance of Si quantum dot-sensitized solar cells, H. Seo, Y. Wang, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Electrochimica Acta, 95, 1, 43-47(2013)
  49. Characterization of the energy flux toward the substrate during magnetron sputter deposition of ZnO thin films , S. Bornholdt, N. Itagaki, K. Kuwahara, H. Wulff, M. Shiratani and H. Kersten, Plasma Sources Sci. Technol., 22, 2, 025019(2013)
  50. Model for Thickness dependence of mobility and concentration in highly conductive ZnO, D. C. Look, K. D. Leedy, A. Kiefer, B. Claflin, N. Itagaki, K. Matsushima, I. Surhariadi, Opt. Engineering, 52, 3, 033801(2013)
  51. The reduction of charge recombination and performance enhancement by the surface modification of Si quantum dot-sensitized solar cell, H. Seo, Y. Wang, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Electrochimica Acta, 87, 1, 213-217(2013)
  52. Dust particle formation due to interaction between graphite and helicon deuterium plasma, S. Iwashita, K. Nishiyama, G. Uchida, H. Seo, N. Itagaki, K. Koga, M. Shiratani, Fusion Engineering and Design, 88, 1, 28-32(2013)
  53. Improvement of Si Adhesion and Reduction of Electron Recombination for Si Quantum Dot-Sensitized Solar Cells, H. Seo, Y. Wang, M. Sato, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Jpn. J. Appl. Phys., 52, 1, 01AD05(5pages)(2013)
  54. High Amount Cluster Incorporation in Initial Si Film Deposition by SiH4 Plasma Chemical Vapor Deposition, Y. Kim, K. Hatozaki, Y. Hashimoto, G. Uchida, K. Kamataki, N. Itagaki, H. Seo, K. Koga, M. Shiratani, Jpn. J. Appl. Phys., 52, 1, 01AD01(4pages)(2013)
  55. Effects of Hydrogen Dilution on ZnO Thin Films Fabricated via Nitrogen Mediated Crystallization, I. Suhariadi, K. Matsushima, K. Kuwahara, K. Oshikawa, D. Yamashita, H. Seo, G. Uchida, K. Kamtaki, K. Koga, M. Shiratani, S. Bornholdt, H. Kersten, Harm Wulff, N. Itagaki, Jpn. J. Appl. Phys., 52, 1, 01AC08(5pages)(2013)
  56. Effects of crystalline nanoparticle incorporation on growth, structure, and properties of microcrystalline silicon films deposited by plasma CVD , Y. Kim, T. Matsunaga, K. Nakahara, G. Uchida, K. Kamataki , N. Itagaki, H. Seo, K. Koga, M. Shiratani , Thin Solid Films, 523, 29-33(2012)
  57. Control of radial density profile of nano-particle produced in reactive plasma by amplitude modulation of rf discharge voltage, K. Kamataki, K. Koga, G. Uchida, N. Itagaki, D. Yamashita, H. Matsuzaki, M. Shiratani, Thin Solid Films, 523, 76-79(2012)
  58. ZnO:Al Thin Films with Buffer Layers Fabricated via Nitrogen Mediated Crystallization: Effects of N2/Ar Gas Flow Rate Ratio, I. Suhariadi, N. Itagaki, K. Kuwahara, K. Oshikawa, D. Yamashita, G. Uchida, K. Kamataki, K. Koga, K. Nakahara, M. Shiratani, Trans. Mater. Res. Soc. Jpn., 37, 2, 165-168(2012)
  59. High quality epitaxial ZnO films grown on solid-phase crystallized buffer layers, K. Kuwahara, N. Itagaki, K. Nakahara, D. Yamashita, G. Uchida, K. Kamataki, K. Koga, M. Shiratani, Thin Solid Films, 520, 14, 4674-4677(2012)
  60. In situ analysis of size dispersion of nano-particles in reactive plasma using two dimentional laser light scattering method, K. Kamataki, Y. Morita, M. Shiratani, K. Koga, G. Uchida, N. Itagaki , Journal of Instrumentation, 7, 4, C04017(2012)
  61. Deposition of cluster-free B-doped a-Si:H films using SiH4+B10H14 multi-hollow discharge plasma CVD, K. Koga, K. Nakahara, Y. Kim, T. Matsunaga, D.Yamashita, H. Matsuzaki, G. Uchida, K. Kamataki, N. Itagaki, and M. Shiratani, Jpn. J. Appl. Phys., 51, 1, 01AD03(4pages)(2012)
  62. Effect of nitridation of Si nano-particles on the performance of quantum-dot sensitized solar cells, G. Uchida, K. Yamamoto, M. Sato, Y. Kawashima, K. Nakahara, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Jpn. J. Appl. Phys., 51, 1, 01AD01(5pages)(2012)
  63. Combinatorial Deposition of Microcrystalline Silicon Films Using Multihollow Discharge Plasma Chemical Vapor Deposition, K. Koga, T. Matsunaga, Y. Kim, K. Nakahara, D. Yamashita, H. Matsuzaki, K. Kamataki, G. Uchida, N. Itagaki, and M. Shiratani, Jpn. J. Appl. Phys., 51, 1, 01AD02(4pages)(2012)
  64. Impacts of Amplitude Modulation of RF Discharge Voltage on the Growth of Nanoparticles in Reactive Plasma, K. Kamataki, H. Miyata, K. Koga, G. Uchida, N. Itagaki, M. Shiratani, Appl. Phys. Express, 4, 10, 105001(3pages)(2011)
  65. Deposition of cluster-free P-doped a-Si:H films using SiH4+PH3 multi-hollow discharge plasma CVD method, K. Koga, K. Nakahara, Y. Kim, Y. Kawashima, T. Matsunaga, M. Sato, D. Yamashita, H. Matsuzaki, G. Uchida, K. Kamataki, N. Itagaki, and M. Shiratani, Physica Status Solidi (c), 8, 10, 3013-3016(2011)
  66. Surface nitridation of silicon nano-particles using double multi-hollow discharge plasma CVD, G. Uchida, K. Yamamoto, Y. Kawashima, M. Sato, K. Nakahara, K. Kamataki, N. Itagaki, K. Koga, M. Kondo, M. Shiratani, Physica Status Solidi (c), 8, 10, 3017-3020(2011)
  67. Hybrid sensitized solar cells using Si nanoparticles and ruthenium dye, G. Uchida, Y. Kawashima, K. Yamamoto, M. Sato, K. Nakahara, T. Matsunaga, D. Yamashita, H. Matsuzaki, K. Kamataki, N. Itagaki, K. Koga, M. Kondo, M. Shiratani, Physica Status Solidi (c), 8, 10, 3021-3024(2011)
  68. Comparison between silicon thin films with and without incorporating crystalline silicon nanoparticles into the film, K. Koga, Y. Kawashima, T. Matsunaga, M. Sato, K. Nakahara, W. M. Nakamura, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani, Thin Solid Films, 519, 20, 6896-6898(2011)
  69. Nano-factories in plasma: present status and outlook, M. Shiratani, K. Koga, S. Iwashita, G. Uchida, N. Itagaki, K. Kamataki, J. Phys. D: Appl. Phys., 44, 17, 174038(2011)
  70. Highly Conducting and Very Thin ZnO:Al Films with ZnO Buffer Layer Fabricated by Solid Phase Crystallization from Amorphous Phase, N. Itagaki, K. Kuwahara, K. Nakahara, D. Yamashita, G. Uchida, K. Koga, M. Shiratani, Appl. Phys. Express, 4, 1, 011101-011101-3 (2011)
  71. Materials, Devices, and Circuits of Transparent Amorphous-Oxide Semiconductor, H. Kumomi, S. Yaginuma, H. Omura, A.Goyal, A. Sato, M. Watanabe, M. Shimada, N. Kaji, K. Takahashi, M. Ofuji, T. Watanabe, N. Itagaki, H. Shimizu, K. Abe, Y. Tateishi, H. Yabuta, T. Iwasaki, R. Hayashi, T. Aiba, M. Sano, J. Display Technol., 5, 12, 531-540(2009)
  72. Zn-In-O based thin-film transistors: Compositional dependence, N. Itagaki, T. Iwasaki, H. Kumomi, T. Den, K. Nomura, T. Kamiya, and H. Hosono, Phys. Stat. Sol. (a), 205, 8, 1915–1919(2008)
  73. Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In-Ga-Zn-O system, T. Iwasaki, N. Itagaki, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono,, Appl. Phys. Lett., 90, 24, 242114(2007)
  74. Guiding Principles for Obtaining High-Quality Microcrystalline Silicon Growth Rates Using SiH4/H2 Glow-Discharge Plasma, C. Niikura, N. Itagaki, Matsuda, Jpn. J. Appl. Phys., 46, 3052-3058(2007)
  75. High rate growth of high-quality microcrystalline silicon films from plasma by interconnected multi-hollow cathode, C. Niikura, N. Itagaki, and MatsudaSurf. Coat. Technol.2019-11, 5463-5467(2007)
  76. Guiding Principles for Preparing High Quality Microcrystalline Silicon at High Growth Rates, C. Niikura, N. Itagaki, and A. Matsuda, Trans. Mater. Res. Soc. Jpn., 31, 2, 503-506(2006)
  77. Electron temperature measurement in SiH4/H2 ECR plasma produced by 915 MHz microwaves, N. Itagaki, K. Sasaki, Y. Kawai, Thin Solid Films, 506-507, 479-484(2006)
  78. Characteristics of the plasma parameters in the fabrication of microcrystalline silicon thin films using 915 MHz ECR plasma, D. Ha Thang, K. Sasaki, H. Muta, N. Itagaki, and Y. Kawai, Thin Solid Films, 506-507, 485-488(2006)
  79. Production of low electron temperature ECR plasma, Y. Kawai, N. Itagaki, M. Koga, and H. Muta, Surf. Coat. Technol., 193, 1-3, 11-16(2005)
  80. Control of the electron temperature by varying the resonance zone width in ECR plasma, N. Itagaki, K. Muta, N. Ishii and Y. Kawai, Thin Solid Films, 457, 1, 59-63(2004)
  81. High-rate growth of microcrystalline silicon films using a high-density SiH4/H2 glow-discharge plasma, C. Niikura, N. Itagaki, M. Kondo, Y. Kawai, and Matsuda, Thin Solid Films, 457, 1, 84-89(2004)
  82. Generation of a low-electron-temperature ECR plasma using mirror magnetic field, H. Muta, N. Itagaki, M. Koga, and Y. Kawai, Surf. Coat. Technol., 174-175, 152-156(2003)
  83. Electron-temperature dependence of nitrogen dissociation in 915 MHz ECR plasma, N. Itagaki, S. Iwata, K. Muta, A. Yonesu, S. Kawakami, N. Ishii and Y. Kawai, Thin Solid Films, 435, 1-2, 259-263(2003)
  84. Electron-temperature control in 915 MHz electron cyclotron resonance plasma, N. Itagaki, S. Kawakami, N. Ishii and Y. Kawai, J. Vac. Sci. Technol., A, 20, 6, 1969-1973(2002)
  85. Production of low-electron-temperature electron cyclotron resonance plasma with large area using 915MHz microwave, N. Itagaki, S. Kawakami, N. Ishii and Y. Kawai, Vacuum, 66, 3-4, 323-328(2002)
  86. Numerical investigation of the production mechanism of a low-temperature electron cyclotron resonance plasma, H. Muta, N. Itagaki, and Y. Kawai, Vacuum, 66, 3-4, 209-214(2002)
  87. Numerical investigation of a low-electron-temperature ECR plasma in Ar/N2 mixtures, H. Muta, M. Koga, N. Itagaki, and Y. Kawai, Surf. Coat. Technol., 171, 1-3, 157-161(2002)
  88. Production of low electron temperature ECR plasma for thin film deposition, N. Itagaki, Y. Ueda, N. Ishii and Y. Kawai, Surf. Coat. Technol., 142-144, 546-550(2001)
  89. Production of low electron temperature ECR plasma for plasma processing, N. Itagaki, Y. Ueda, N. Ishii and Y. Kawai, Thin Solid Films, 390, 1-2, 202-207(2001)
  90. Investigation of ECR plasma uniformity from the point of view of production & confinement, N. Itagaki, T. Yoshizawa, Y. Ueda and Y. Kawai, Thin Solid Films, 386, 2, 152-159(2001)
  91. Production of low-electron-temperature electron cyclotron resonance plasma using nitrogen gas in the mirror magnetic field, N. Itagaki, Y. Ueda, N. Ishii and Y. Kawai, Jpn. J. Appl. Phys., 40, 4A, 2489-2494(2001)
  92. Effect of magnetic-mirror confinement on electron temperature control in ECR plasma, N. Itagaki, Y. Ueda, N. Ishii and Y. Kawai, J. Plasma Fusion Res., 4, 305-308(2001)
  93. Plasma parameter measurements and deposition of a-Si:H thin films in pulsed ECR plasma, N. Itagaki, A. Fukuda, T. Yoshizawa, M. Shindo, Y. Ueda and Y. Kawai, Surf. Coat. Technol., 131, 1-3, 54-57(2000)

Proceedings

  1. Attraction during binary collision of fine particles in Ar plasma, M. Soejima, T. Ito, D. Yamashita, N. Itagaki, H. Seo, K. Koga, M. Shiratani, Proc. 68th GEC/9th ICRP/33rd SPP609, GT1.18(2015)
  2. Cross correlation analysis of plasma perturbation in amplitude modulated reactive dusty plasmas, T. Ito, M. Soejima, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani, T. Kobayashi, S. Inagaki, Proc. 68th GEC/9th ICRP/33rd SPP609, GT1.49(2015)
  3. Raman Spectroscopy of a-C:H Films Deposited Using Ar + H2+ C7H8 Plasma CVD, X. Dong, K. Koga, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori, Proc. 68th GEC/9th ICRP/33rd SPP609, GT1.145(2015)
  4. Substrate temperature dependence of Au-induced crystalline Ge film formation using sputtering deposition, S. Tanami, D. Ichida, D. Hashimoto, G. Uchida, H. Seo, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Proc. 68th GEC/9th ICRP/33rd SPP609, GT1.149(2015)
  5. Measurements of nitrogen atom density in N2/Ar sputtering plasma for fabrication of high-mobility amorphous In2O3:Sn films, T. Takasaki, T. Ide, K. Matsushima, K. Takeda, M. Hori, D. Yamashita, H. Seo, K. Koga, M, Shiratani, N. Itagaki, Proc. 68th GEC/9th ICRP/33rd SPP, 60, 9, GT1.150(2015)
  6. Cluster Incorporation into A-Si:H Films Deposited Using H 2 +SiH 4 Discharge Plasmas, S. Toko, Y. Torigoe, K. Keya, H. Seo, N. Itagaki, K. Koga, M. Shiratani, Proc. 68th GEC/9th ICRP/33rd SPP, 60, 9, GT1.152(2015)
  7. Measurements of absolute densities of nitrogen and oxygen atoms in sputtering plasma for fabrication of ZnInON films, K. Matsushima, T. Ide, K. Takeda, M. Hori, D. Yamashita, H. Seo, K. Koga, M, Shiratani, N. Itagaki, Proc. 68th GEC/9th ICRP/33rd SPP, 60, 9, GT1.154(2015)
  8. Measurement of absolute density of N atom in sputtering plasma for epitaxial growth ZnO films via nitrogen mediated crystallization, T. Ide, K. Matsushima, T. Takasaki, K. Takeda, M. Hori, D. Yamashita, H. Seo, K. Koga, M, Shiratani, N. Itagaki, Proc. 68th GEC/9th ICRP/33rd SPP, 60, 9, GT1.155(2015)
  9. Deposition rate and etching rate due to neutral radicals and dust particles measured using QCMs together with a dust eliminating filter, R. Katayama, K. Koga, D. Yamashita, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, M. Tokitani, S. Masuzaki, K. Nishimura, A. Sagara, LHD Experimental Group, Proc. 68th GEC/9th ICRP/33rd SPP, 60, 9, LW1.101(2015)
  10. Laser trapped single fine particle as a probe of plasma parameters, D. Yamashita, M. Soejima, T. Ito, H. Seo, N. Itagaki, K. Koga, M. Shiratani, Proc. 68th GEC/9th ICRP/33rd SPP, 60, 9, LW1.104(2015)
  11. Effects of electrode structure on characteristics of multi-hollow discharges, Y. Torigoe, K. Keya, S. Toko, H. Seo, N. Itagaki, K. Kamataki, K. Koga, M. Shiratani, Proc. 68th GEC/9th ICRP/33rd SPP, 60, 9, LW1.129(2015)
  12. Raman spectroscopy of PIN hydrogenated amorphous silicon solar cells, K. Keya, Y. Torigoe, S. Toko, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani, Proc. 68th GEC/9th ICRP/33rd SPP, 60, 9, LW1.132(2015)
  13. Effects of N2 dilution on fabrication of Ge nanoparticles by rf sputtering, S. Hashimoto, S. Tanami, H. Seo, G. Uchida, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Proc. 68th GEC/9th ICRP/33rd SPP, 60, 9, LW1.133(2015)
  14. Effects of Ambient Humidity on Plant Growth Enhancement by Atmospheric Air Plasma Irradiation to Plant Seeds, T. Sarinont, T. Amano, K. Koga, S. Kitazaki, N. Hayashi, M. Shiratani, Proc. 68th GEC/9th ICRP/33rd SPP, 60, 9, LW1.136(2015)
  15. Simple Evaluation Method of Atmospheric Plasma Irradiation Dose using pH of Water, K. Koga, T. Sarinont, T. Amano, H. Seo, N. Itagaki, Y. Nakatsu, A. Tanaka, M. Shiratani, Proc. 68th GEC/9th ICRP/33rd SPP, 60, 9, LW1.143(2015)
  16. Synthesis of indium-containing nanoparticles using plasmas in water to study their effects on living body, T. Amano, K. Koga, T. Sarinont, H. Seo, N. Itagaki, M. Shiratani, S. Kitazaki, M. Hirata, Y. Nakatsu, A. Tanaka, Proc. 68th GEC/9th ICRP/33rd SPP, 60, 9, LW1.158(2015)
  17. ZnO-based semiconductors with tunable band gap for solar sell applications, N. Itagaki, K. Matsushima, D. Yamashita, H. Seo, K. Koga, M. Shiratani, Proc. SPIE photonics west 2015, 9364, 93640P(2015)
  18. Effects of morphology of buffer layers on ZnO/sapphire heteroepitaxial growth by RF magnetron sputtering, T. Ide, K. Matsushima, R. Shimizu, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki, Mat. Res. Soc. Symp. Proc., 1741, aa09-12(2015)
  19. Fabrication of p-i-n solar cells utilizing ZnInON by RF magnetron sputtering, K. Matsushima, R. Shimizu, T. Ide, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki, Mat. Res. Soc. Symp. Proc., 1741, aa09-10(2015)
  20. Deposition of crystalline Ge nanoparticle films by high-pressure RF magnetron sputtering method, D. Ichida, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, K. Koga and M. Shiratani, J. Phys. : Conf. Series (SPSM26), 518, 1, 012002(2014)
  21. Effects of filter gap of cluster-eliminating filter on cluster eliminating efficiency, Y. Hashimoto, S. Toko, D. Yamashita, H. Seo, K. Kamataki, N. Itagaki, K. Koga and M. Shiratani, J. Phys. : Conf. Series (SPSM26), 518, 1, 012007(2014)
  22. Contribution of ionic precursors to deposition rate of a-Si:H films fabricated by plasma CVD, S. Toko, Y. Hashimoto, Y. Kanemitu, Y. Torigoe, H. Seo, G. Uchida, K. Kamataki, N. Itagaki, K. Koga and M. Shiratani, J. Phys. : Conf. Series (SPSM26), 518, 1, 012008(2014)
  23. Contribution of H2 plasma etching to radial profile of amount of dust particles in a divertor simulator, M. Tateishi, K. Koga, D. Yamashita, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura and A. Sagara, the LHD Experimental Group, J. Phys. : Conf. Series (SPSM26), 518, 1, 012009(2014)
  24. Emission spectroscopy of Ar + H-2+ C7H8 plasmas: C7H8 flow rate dependence and pressure dependence , X. Dong, K. Koga, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, Y. Setsuhara, M. Sekine and M. Hori, J. Phys. : Conf. Series (SPSM26), 518, 1, 012010(2014)
  25. Plasma etching of single fine particle trapped in Ar plasma by optical tweezers, T. Ito, K. Koga, D. Yamashita, K. Kamataki, N. Itagaki, G. Uchida and M. Shiratani, J. Phys. : Conf. Series (SPSM26), 518, 1, 012014(2014)
  26. SiC Nanoparticle Composite Anode for Li-Ion Batteries, M. Shiratani, K. Kamataki, G. Uchida, K. Koga, H. Seo, N. Itagaki, T. Ishihara, Mat. Res. Soc. Symp. Proc., 1678(2014)
  27. Off-axis sputter deposition of ZnO films on c-sapphire substrates with buffer layers prepared via nitrogen-mediated crystallization, N. Itagaki, K. Matsushima, D. Yamashita, H. Seo, K. Koga, M. Shiratani, Proc. SPIE photonics west 2014, 8987, 89871A(2014)
  28. Combinatorial Plasma CVD of Si Nanoparticle Composite Films for Band Gap Control, G. Uchida, Y. Kanemitsu, D. Ichida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Jpn. Phys. Soc. Conf. Proc (APPC12), 1, 015080(2014)
  29. Correlation between nanoparticle growth and plasma parameters in low pressure reactive VHF discharge plasmas, M. Shiratani, Y. Morita, K. Kamataki, H. Seo, G. Uchida, N. Itagaki, K. Koga, Jpn. Phys. Soc. Conf. Proc (APPC12), 1, 015083(2014)
  30. Effects of H2 Gas Addition on Structure of Ge Nanoparticle Films Deposited by High-pressure RF Magnetron Sputtering Method, G. Uchida, D. Ichida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Jpn. Phys. Soc. Conf. Proc (APPC12), 1, 015082(2014)
  31. Spatial Profile of Flux of Dust Particles Generated due to Interaction between Hydrogen Plasmas and Graphite Target, M. Tateishi, K. Koga, D. Yamashita, K. Kamataki, G. Uchida, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura, A. Sagara, and the LHD Experimental Group, Jpn. Phys. Soc. Conf. Proc (APPC12), 1, 015020(2014)
  32. Effects of Grid DC Bias on Incorporation of Si Clusters into Amorphous Silicon Thin Films in Multi-Hollow Discharge Plasma CVD, S. Toko, Y. Kim, Y. Hashimoto, Y. Kanemitu, H. Seo, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, and M. Shiratani, Jpn. Phys. Soc. Conf. Proc (APPC12), 1, 015069(2014)
  33. Deposition of Carbon Films on PMMA Using H-assisted Plasma CVD, X. Dong, R. Torigoe, K. Koga, G. Uchida, M. Shiratani, N. Itagaki, Y. Setsuhara, K. Takenaka, M. Sekine, .M. Hori, Jpn. Phys. Soc. Conf. Proc (APPC12), 1, 015072(2014)
  34. Study on the Crystal Growth Mechanism of ZnO Films Fabricated Via Nitrogen Mediated Crystallization, I. Suhariadi, K. Oshikawa, D. Yamashita, K. Kamataki, G. Uchida, K. Koga, M. Shiratani, and N. Itagaki, Jpn. Phys. Soc. Conf. Proc (APPC12), 1, 015064(2014)
  35. Combinatorial evaluation of optical properties of crystalline Si nanoparticle embedded Si films deposited by a multi-hollow discharge plasma CVD method, Y. Kanemitsu, G. Uchida, D. Ichida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Proc. 8th Int. Conf. Reactive Plasmas, 6P-AM-S08-P35(2014)
  36. Deposition of Crystalline Ge Nanoparticle Films Varying H2 Dilution Ratio Using High Pressure rf Magnetron Sputtering, S. Hashimoto, D. Ichida, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Proc. 8th Int. Conf. Reactive Plasmas, 6P-AM-S08-P32(2014)
  37. Effects of amplitude modulation on deposition of hydrogenated amorphous silicon films using multi-Hollow discharge plasma CVD method, Y. Torigoe, Y. Hashimoto, S. Toko, Y. Kim, D. Yamashita, H. Seo, N. Itagaki, K. Kamataki, K. Koga, M. Shiratani, Proc. 8th Int. Conf. Reactive Plasmas, 6P-AM-S08-P36(2014)
  38. Fabrication of size-controlled Ge nanoparticle films varying gas flow rate using high pressure rf magnetron sputtering method, D. Ichida, S. Hashimoto, G. Uchida, H. Seo, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Proc. 8th Int. Conf. Reactive Plasmas, 6P-AM-S08-P33(2014)
  39. Substrate temperature dependence of hydrogen content of a-Si:H film deposited with a cluster-eliminating filter, Y. Hashimoto, S. Toko, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Proc. 8th Int. Conf. Reactive Plasmas, 6P-AM-S08-P37(2014)
  40. Analysis of fluctuation of Ar metastable density and nanoparticle amount in capacitively coupled discharges with amplitude modulation, Y. Morita, T. Ito, S. Iwashita, D. Yamashita, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Proc. 8th Int. Conf. Reactive Plasmas, 5P-AM-S02-P10(2014)
  41. Fabrication of In-rich ZnInON filmswith narrow band gap by RF magnetron sputtering, K. Matsushima, R. Shimizu, T. Ide, D. Yamashita, G. Uchida, H. Seo, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki, Proc. 8th Int. Conf. Reactive Plasmas, 5P-PM-S08-P02(2014)
  42. Fine response of deposition rate of Si films deposited by multi-hollow discharge plasma CVD with amplitude modulation, S. Toko, Y. Hashimoto, Y. Kanemitu, Y. Torigoe, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Proc. 8th Int. Conf. Reactive Plasmas, 5P-AM-S05-P17(2014)
  43. Magnetron sputtering of low-resistive In2O3:Sn films with buffer layers fabricated via nitrogen mediated crystallization, K. Oshikawa, I. Suhariadi, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani, N. Itagaki, Proc. 8th Int. Conf. Reactive Plasmas, 5P-PM-S08-P07(2014)
  44. Nanoparticle amount in reactive plasmas with amplitude modulation detected by twodimensional laser light scattering method, T. Ito, Y. Morita, S. Iwashita, D. Yamashita, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Proc. 8th Int. Conf. Reactive Plasmas, 5P-AM-SPD-P01(2014)
  45. Pressure dependence of carbon film deposition using H-assisted plasma CVD, X. Dong, K. Koga, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, K. Takenaka, Y. Setsuhara, M. Sekine, M. Hori, Proc. 8th Int. Conf. Reactive Plasmas, 5P-PM-S08-P14(2014)
  46. Raman spectroscopy of a fine particle optically trapped in plasma, D. Yamashita, K. Koga, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani, Proc. 8th Int. Conf. Reactive Plasmas, 5P-AM-S05-P23(2014)
  47. Spatial profile of flux of dust particles in hydrogen helicon plasmas, M. Tateishi, K. Koga, D. Yamashita, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura, A. Sagara, the LHD Experimental Group, Proc. 8th Int. Conf. Reactive Plasmas, 5P-AM-S05-P21(2014)
  48. Sputtering fabrication of a novel widegap semiconductor ZnGaON for optoelectronic devices with wide bandgap for optical device, R. Shimizu, K. Matsushima, T. Ide, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki, Proc. 8th Int. Conf. Reactive Plasmas, 5P-PM-S08-P03(2014)
  49. Study on nitrogen desorption behavior of sputtered ZnO for transparent conducting oxide, I. Suhariadi, K. Oshikawa, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki, Proc. 8th Int. Conf. Reactive Plasmas, 5P-PM-S08-P05(2014)
  50. Subacute toxicity of gallium arsenide, indium arsenide and arsenic trioxide following intermittent intrantracheal instillations to the lung of rats, A. Tanaka, M. Hirata, K. Koga, N. Itagaki, M. Shiratani, N. Hayashi, G. Uchida, Proc. 8th Int. Conf. Reactive Plasmas, 5P-AM-S2-P35(2014)
  51. A model for correlation between plasma fluctuation and fluctuation of nanoparticle growth in reactive plasmas, M. Shiratani, K. Koga, K. Kamataki, S. Iwashita, Y. Morita, H. Seo, N. Itagaki, G. Uchida, Proc. 8th Int. Conf. Reactive Plasmas, 4B-PM-O1(2014)
  52. Epitaxial growth of ZnO films on sapphire substrates by magnetron sputtering: Effects of buffer layers prepared via nitrogen mediated crystallization, T. Ide, K. Matsushima, R. Shimizu, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki, Proc. 8th Int. Conf. Reactive Plasmas, 4P-PM-S08-P10(2014)
  53. Fabrication of SiC nanoparticles as high capacity electrodes for Li-ion batteries, G. Uchida, K. Kamataki, D. Ichida, Y. Morita, H. Seo, N. Itagaki, K. Koga, T. Ishihara, M. Shiratani, Proc. 8th Int. Conf. Reactive Plasmas, 4C-PM-O1(2014)
  54. Quantum characterization and photovoltaic application of Si nano-particles fabricated by multi-hollow plasma discharge chemical vapor deposition, H. Seo, D. Ichida, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, Proc. 8th Int. Conf. Reactive Plasmas, 4P-PM-S11-P36(2014)
  55. Coupling between radicals and nanoparticles in initial growth phase in reactive plasmas with amplitude modulation (Invited), K. Koga, Y. Morita, K. Kamataki, D. Yamashita, N. Itagaki, G. Uchida, M. Shiratani, Proc. 8th Int. Conf. Reactive Plasmas, 3B-WS-14(2014)
  56. Sputter Deposition of Ga-doped Zinc Oxide (GZO) Films with Buffer Layers Fabricated via Nitrogen Mediated Crystallization, T. Nakanishi, K. Oshikawa, I. Suhariadi, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki, Proc. 8th Int. Conf. Reactive Plasmas, 5P-AM-S05-P19(2014)
  57. Observation of nanoparticle growth process using a high speed camera, Y. Morita, S. Iwashita, D. Yamashita, G. Uchida, K. Kamataki, H. Seo, N. Itagaki, K. Koga, and M. Shiratani, ISPC 21 Proceedings(2013)
  58. Growth control of ZnO nano-rod with various seeds and photovoltaic application, H. Seo, Y. Wang, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, J. Phys. : Conference Series (11th APCPST), 441, 1, 012029(2013)
  59. Crystallinity control of sputtered ZnO films by utilizing buffer layers fabricated via nitrogen mediated crystallization: Effects of nitrogen flow rate, N. Itagaki, K. Oshikawa, K. Matsushima, I. Suhariadi, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani, Proc. 13th International Conference on Plasma Surface Engineering, 2, 26, 84-87(2013)
  60. Control of Deposition Profile and Properties of Plasma CVD Carbon Films, K. Koga, T. Urakawa, G. Uchida, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani, Proc. 13th International Conference on Plasma Surface Engineering, 2, 26, 136-139(2013)
  61. Control of nanoparticle formation in reactive plasmas and its application to fabrication of green energy devices, M. Shiratani, G. Uchida, K. Kamataki, H. Seo, N. Itagaki, K. Koga, Proc. 13th International Conference on Plasma Surface Engineering, 2, 26, 100-103(2013)
  62. Sputter deposition of Epitaxial Zinc-Indium Oxynitride Films for Excitonic Transistors (Invited), N. Itagaki, K. Matsushima, T. Hirose, K. Kuwahara, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani, Proc. International Symposium on Dry Process, 34, 97-98(2012)
  63. Characteristics of stable a-Si:H Schottoky cells fabricated by suppressing cluster deposition, M. Shiratani, K. Hatozaki, Y. Hashimoto, Y. Kim, H. Seo, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, Mat. Res. Soc. Symp. Proc., 1426, 377-382(2012)
  64. In-situ Measurements of Cluster Volume Fraction in Silicon Thin Films Using Quartz Crystal Microbalances, Y. Kim, K. Hatozaki, Y. Hashimoto, H. Seo, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Mat. Res. Soc. Symp. Proc., 1426, 307-311(2012)
  65. The Optical Analysis and Application of Size-controllable Si Quantum Dots Fabricated by Multi-hollow Discharge Plasma Chemical Vapor Deposition, H. Seo, Y. Wang, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Mat. Res. Soc. Symp. Proc., 1426, 313-318(2012)
  66. Novel fabrication method for ZnO films via nitrogen-mediated crystallization (Invited), N. Itagaki, K. Kuwahara, K. Matsushima, K. Oshikawa , Proc. of SPIE photonics west 2012, 8263, 826306(2012)
  67. Low resistive ZnO:Al films with ZnO buffer layers fabricated by Ar/N2 magnetron sputtering, N. Itagaki, K. Kuwahara, K. Nakahara, D. Yamashita, K. Kamataki, H. Seo, G. Uchida, K. Koga, M. Shiratani, Proc. Plasma Conf. 2011, 24G16(2011)
  68. Performance enhancement of Si quantum dot-sensitized solar cells by surface modification using ZnO barrier layer, Y. Wang, M. Sato, H. Seo, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, Proc. Intern. Symp. on Dry Process, 33, 133-134(2011)
  69. Self-organized carbon Mk formation on the top surface of fine trenches using a low temperature plasma anisotropic CVD for depositing fine organic structure, K. Koga, T. Urakawa, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori, Proc. Plasma Conf. 2011, 23G03(2011)
  70. Effects of electrolyte on performance of quantum dot-sensitized solar cells using Si nanoparticles synthesized by multi-hollow discharge plasma CVD, Y. Wang, M. Sato, H. Seo, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, Proc. Plasma Conf. 2011, 23P013-O(2011)
  71. Effects of nanoparticle incorporation on Si thin films deposited by plasma CVD, M. Shiratani, Y. Kim, T. Matsunaga, H. Seo, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, Proc. Plasma Conf. 2011, 24G06(2011)
  72. Deposition of cluster-free a-Si:H films using cluster eliminating filter, K. Nakahara, K. Hatozaki, Y. Hashimoto, T. Matsunaga, M. Sato, D. Yamashita, H. Matsuzaki, H. Seo, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, Proc. Plasma Conf. 2011, 24P010-O(2011)
  73. Radical Flux Evaluation to Microcrystalline Silicon Films Deposited by Multi-Hollow Discharge Plasma CVD, Y. Kim, T. Matsunaga, H. Seo, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, Proc. Plasma Conf. 2011, 24P011-O(2011)
  74. Collection of carbon dust particles formed due to plasma-wall interactions between high density H2 plasma and carbon wall onto substrates by applying local DC bias voltage, K. Nishiyama, Y. Morita, D. Yamashita, K. Kamataki, G. Uchida, H. Seo, N. Itagaki, K. Koga, M. Shiratani, N. Ashikawa, S. Muzaki, K. Nishimura, A. Sagara, the LHD Experimental Group, S. Bornholdt, H. Kersten, Proc. Plasma Conf. 2011, 24P094-O(2011)
  75. Study of interaction between plasma fluctuation and nucleation of nanoparticle in plasma CVD, K. Kamataki, K. Koga, G. Uchida, H. Seo, N. Itagaki, M. Shiratani, Proc. Plasma Conf. 2011, 24P014-O(2011)
  76. Influence of nano-particles on multi-hollow discharge plasma for microcrystalline silicon thin films deposition, T. Matsunaga, Y. Kim, K. Koga, H. Seo, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani, Proc. Plasma Conf. 2011, 24P015-O(2011)
  77. Deposition of highly stable cluster-free a-Si:H films using fast gas flow multi-hollow discharge plasma CVD method, K. Hatozaki, K. Nakahara, T. Matsunaga, G. Uchida, H. Seo, N. Itagaki, K. Koga, M. Shiratani, Proc. Plasma Conf. 2011, 24P016-O(2011)
  78. Effects of N2 gas addition to sputtering plasma on properties of epitaxial ZnO films, K. Kuwahara, N. Itagaki, K. Nakahara, D. Yamashita, Seo H., G. Uchida, K. Kamataki, K. Koga, M. Shiratani, Proc. Plasma Conf. 2011, 24P008-O(2011)
  79. Properties and performance of si quantum dot-sensitized solar cells with low temperature titania paste, Y. Wang, M. Sato, T. Matsunaga, N. Itagaki, H. Seo, G. Uchida, K. Koga, M. Shiratani, Proc. PVSEC-21, 3D-5P-09(2011)
  80. Combinatorial study on effects of substatrate temperature of silicon film deposition using multi-hollow discharge plasma cvd, Y. Kim, T. Matsunaga, D. Yamashita, K. Kamataki, N. Itagaki, G. Uchida, K. Koga, M. Shiratani, Proc. PVSEC-21, 3D-2P-09(2011)
  81. Defect density of cluster-free a-si:h films deposited by multi-hollow discharge plasma CVD, K. Nakahara, K. Hatozaki, M. Sato, T. Matsunaga, D. Yamashita, H. Matsuzaki, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, Proc. PVSEC-21, 3D-2P-20(2011)
  82. Zinc oxide-based transparent conducting films with buffer layers fabricated via nitrogen-mediated crystallization, N. Itagaki, K. Kuwahara, D. Yamashita, G. Uchida, K. Kamataki, K. Koga, M. Shiratani, Proc. PVSEC-21, 4D-2P-10(2011)
  83. Zno films with buffer layers crystallized via nitrogen mediation: Effects of deposition temperature of buffer layers, K. Kuwahara, N. Itagaki, K. Nakahara, D. Yamashita, G. Uchida, K. Kamataki, K. Koga, M. Shiratani, Proc. PVSEC-21, 4D-2P-11(2011)
  84. Effects of nano-particles on (220) crystal orientation of microcrystallite silicon thin films, T. Matsunaga, Y. Kim, K. Koga, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani, Proc. PVSEC-21, 4D-2P-16(2011)
  85. Impacts of Plasma Fluctuations on Growth of Nano-Particles in Reactive Plasma, K. Kamataki, H. Miyata, K. Koga, G. Uchida, N. Itagaki, D. Yamashita, H. Matsuzaki, M. Shiratani, Proc. of International Conference on Phenomena in Ionized Gases(ICPIG) 2011 Conference, D13-318(2011)
  86. Combinatorial study of substrate temperature dependence on properties of silicon films deposited using multihollow discharge plasma CVD, Y. Kim, T. Matsunaga, Y. Kawashima, D. Yamashita, K. Kamataki, N. Itagaki, G. Uchida, K. Koga, M. Shiratani, Proc. of The 20th International Symposium on Plasma Chemistry (ISPC20), POL08(2011)
  87. Novel Fabrication Method for Transparent Conducting Oxide Films Utilizing Solid-Phase Crystallized Seed Layers, N. Itagaki, K. Kuwahara, K. Nakahara, Proc. Int. Conf. Advances in Condensed and Nano Materials 2011, 1393, 23-26 (2011)
  88. Generation and Surface Modification of Si nano-particles using SiH4/H2 and N2 multi-hollow discharges and their application to the third generation photovoltaics, K. Koga, G. Uchida, K. Yamamoto, Y. Kawashima, M. Sato, K. Kamataki, N. Itagaki, M. Shiratani, International Conference on Advances in Condensed and Nano Materials (ICACNM), 1393, 27-30(2011)
  89. Novel fabrication method of ZnO films utilizing solid-phase crystallized seed layers, N. Itagaki, K. Kuwahara, Mat. Res. Soc. Symp. Proc., 1315, 15-20 (2011)
  90. "Novel fabrication method for oxide semiconductors via atomic-additive mediated crystallization ", N. Itagaki, Proc. IEEE TENCON 2010, 998-1001(2010)
  91. Fluctuation Control for Plasma Nanotechnologies, M. Shiratani, K. Koga, G. Uchida, N. Itagaki, K. Kamataki, Proc. IEEE TENCON 2010, XII-XVI (2010)
  92. Effects of Amplitude Modulation of rf Discharge Voltage on Growth of Nano-Particles in Reactive Plasma, K. Kamataki, H. Miyata, K. Koga, G. Uchida, N. Itagaki, D. Yamashita, H. Matsuzaki, M. Shiratani, Proc. IEEE TENCON 2010, 1943-1947(2010)
  93. Effects of Ar addition on breakdown voltage in a Si(CH3)2(OCH3)2 RF discharge, G. Uchida, S. Nunomutra, H. Miyata, S. Iwashita, D. Yamashita, H. Matsuzaki, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Proc. IEEE TENCON 2010, 2199-2201(2010)
  94. Cluster-Free B-Doped a-Si:H Films Deposited Using SiH4 + B10H14 Multi-Hollow Discharges, K. Nakahara, Y. Kawashima, M. Sato, T. Matsunaga, K. Yamamoto, W. M. Nakamura, D. Yamashita, H. Matsuzaki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, Proc. IEEE TENCON 2010, 2216-2218(2010)
  95. Deposition profiles of microcrystalline silicon films using multi-hollow discharge plasma CVD, T. Matsunaga, Y. Kawashima, K. Koga, K. Nakahara, W. M. Nakamura, G. Uchida, N. Itagaki, D. Yamashita, H. Matsuzaki, M. Shiratani, Proc. IEEE TENCON 2010, 2219-2212(2010)
  96. Substrate Temperature Dependence of Sticking Probability of SiOx-CH3 Nano-Particles, H. Miyata, K. Nishiyama, S. Iwashita, H. Matsuzaki, D. Yamashita, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, Proc. of International Symposium on Dry Process, 43-44(2010)
  97. Optical and Electrical Properties of Particle Composite Thin Films deposited in SiH4/H2 and N2 Multi-Hollow Discharges , G. Uchida, M. Sato, Y. Kawashima, K. Yamamoto, K. Nakahara, D. Yamashita, H. Matsuzaki, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, M. Kondo, Proc. of MNC2010, 12D-11-66 (2010)
  98. Deposition rate enhancement of cluster-free P-doped a-Si:H films using multi-hollow discharge plasma CVD method, K. Nakahara, Y. Kawashima, M. Sato, T. Matsunaga, K. Yamamoto, W. M. Nakamura, D. Yamashita, H. Matsuzaki, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Proc. of 63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasma, 55, 7, CTP.00087(2010)
  99. Combinatorial deposition of microcrystalline Si films using multi-hollow discharge plasma CVD, T. Matsunaga, Y. Kawashima, K. Koga, W. M. Nakamura, K. Nakahara, H. Matsuzaki, D. Yamashita, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani, Proc. of 63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasma, 55, 7, CTP.00089(2010)
  100. Generation of nitridated silicon particles and their thin film deposition using double multi-hollow discharges, G. Uchida, M. Sato, Y. Kawashima, K. Nakahara, K. Yamamoto, T. Matsunaga, D. Yamashita, H. Matsuzaki, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Proc. of 63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasma, 55, 7, CTP.00093(2010)
  101. Carbon dust particles generated due to H2 plasma-carbon wall interaction, H. Miyata, K. Nishiyama, S. Iwashita, H. Matsuzaki, D. Yamashita, G. Uchida, N. Itagaki, K. Kamataki, K. Koga, M. Shiratani, N. Ashikawa, S. Muzaki, K. Nishimura, A. Sagara, LHD experimental group, Proc. of 63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasma, 55, 7, CTP.00114(2010)
  102. Si quantum dot-sensitized solar cells using Si nanoparticles produced by plasma CVD, Y. Kawashima, K. Yamamoto, M. Sato, K. Nakahara, T. Matsunaga, W. M. Nakamura, D. Yamashita, H. Matsuzaki, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, M. Kondo, Proc. 35th IEEE Photovoltaic Specialists Conf., 3347-3351(2010)
  103. Deposition of cluster-free P-doped a-Si:H films using a multi-hollow discharge plasma CVD method, K. Nakahara, Y. Kawashima, M. Sato, T. Matsunaga, K. Yamamoto, W. M. Nakamura, D. Yamashita, H. Matsuzaki, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Proc. 35th IEEE Photovoltaic Specialists Conf., 3722-3755(2010)
  104. Favorable Elements for an Indium-based Amorphous-oxide TFT Channel: Study of In-X-O (X=B, Mg, Al, Si, Ti, Zn, Ga, Ge, Mo, Sn) Systems, A. Goyal, T. Iwasaki, N. Itagaki, T. Den, and H. Kumomi, Mat. Res. Soc. Symp. Proc, 1109, 1109-B04-0(2009)
  105. Combinatorial study on In-Ga-Zn-O semiconductor films as active-channel layers for thin-film transistor, T. Iwasaki, N. Itagaki, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, Mat. Res. Soc. Symp. Proc., 928, 80-85(2006)
  106. Production of high density VHF plasma using a cathode with interconnected multi holes, N. Itagaki, C. Niikura, A. Matsuda and M. Kondo, Proc. Plasma Sci. Symp. 2005 and the 22th Symp. on plasma processing, 163-164(2005)
  107. Investigation of the Plasma Parameters in 915 MHz ECR Plasma with SiH4/H2 Mixtures, H. Muta, D. Ha Thang, N. Itagaki, and Y. Kawai, Proc. Plasma Sci. Symp. 2005 and the 22th Symp. on plasma processing, 521-522(2005)
  108. Relationship between the electron temperature and the power absorption profile in ECR plasma, N. Itagaki, K. Muta, N. Ishii and Y. Kawai, Proc. 16th Intern. Symp. on Plasma Chemistry, Po5.18(2003)
  109. Behavior of the molecular dissociation in 915 MHz ECR nitrogen plasma, N. Itagaki, S. Iwata, K. Muta, A. Yonesu, S. Kawakami, N. Ishii and Y. Kawai, Proc. 5th Intern. Conf. Reactive Plasmas, 1, 319-320(2002)
  110. Production of low electron temperature ECR plasma for plasma application, N. Itagaki, S. Kawakami, N. Ishii and Y. Kawai, Proc. XXV Intern. Conf. Phenomena in Ionized Gases, 137-138(2001)
  111. Production of low-electron-temperature ECR plasma using 915 MHz microwave, N. Itagaki, S. Kawakami, N. Ishii and Y. Kawai, Proc. Plasma Sci. Symp. 2001 and the 18th Symp. on plasma processing, 111-112(2001)

基調講演

  1. Fabrication of High-Mobility Amorphous In2O3:Sn Films by RF Magnetron Sputtering with Impurity-Mediated Amorphization Method, Naho Itagaki, 15th Int'l Conf. Adv. Mater., Kyoto Univ., Aug. 30, 2017
  2. Sputtering growth of (ZnO)x(InN)1-x semiconductor: a ZnO-based compound with bandgap tunability over the entire visible spectrum (Invited), N. Itagaki, K. Matsushima, D. Ymashita, H. Seo, K. Koga, M. Shiratani, 26th annual meeting of MRS-J, Yokohama Port Opening Plaza, 2016-12-20.

招待講演

  1. 逆SKモードを利用した超高品質スパッタエピタキシー, 板垣奈穂, Plasma Conference 2017, 姫路商工会議所, Nov. 20-24, 2017
  2. Inverse Stranski-Krastanov Growth of Single Crystalline ZnO-Based Semiconductors on Lattice Mismatched Substrates, Naho Itagaki, 15th Int'l Conf. Adv. Mater., Kyoto Univ., Aug. 29, 2017
  3. 不純物添加スパッタリング法による高移動度アモルファスIn2O3:Sn薄膜の作製, 板垣奈穂, 日本学術振興会153委員会,なごやサイエンスパーク, April 21, 2017.
  4. スパッタエピタキシー法を用いた高品質単結晶薄膜の形成 (招待講演), 板垣奈穂, プラズマ核融合学会第29回専門講習会「スパッタ技術の現状と展望」, 名古屋大学, 2017-01-27.
  5. バンドギャップチューニング可能なZnO系新半導体材料の開発(プラズマエレクトロニクス賞受賞記念講演), 板垣奈穂, 松島宏一, 山下大輔, 徐鉉雄, 古閑一憲, 白谷 正治, 第77回応用物理学会秋季学術講演会, 朱鷺メッセ, 新潟, 2016-09-14.
  6. Inverse SK mode of epitaxial film growth and its application to solar cells (Invited), N. Itagaki, The 3rd Korea-Japan Joint Symposium on Advanced Solar Cells, Welli Hilli Park, Kangwon Province, Korea, 2016-02-17.
  7. 可視領域でバンドギャップチューニング可能な新材料ZIONの開発, 板垣奈穂, 固体化学の新しい指針を探る研究会第78回定例研究会, 大阪大学, 2015-10-02.
  8. Single Crystal Growth On Large Lattice-Mismatched Substrates By Using Buffer Layers With Fine Grains (Invited), N. Itagaki, The 10th Asian-European International Conference on Plasma Surface Engineering (AEPSE2015), Ramada Plaza Jeju Hotel, Korea, 2015-09-22.
  9. 可視領域でバンドギャップチューニング可能なZnO系新材料の開発(招待講演), 板垣奈穂, 松島宏一, 井手智章, 山下大輔, 徐鉉雄, 古閑一憲, 白谷正治, 第62回応用物理学会春季学術講演会, 東海大学, 2015-03-12.
  10. ZnO-based semiconductors with tunable band gap for 3rd generation solar sells (Invited), N. Itagaki, International Society for Optics and Photonics, Photonics West 2015, The Moscone Center, San Francisco, United States of America, 2015-02-09.
  11. 不純物添加結晶化法による高品質ZnO薄膜の形成(招待講演), 板垣奈穂, 学振166委員会 第66回研究会 , アイビーホール青学会館, 東京, 2015-01-30.
  12. ZnO-based semiconductors with tunable band gap for solar cell application (Invited), Naho Itagaki, 2015 Japan-Korea Joint Symposium on Advanced Solar Cells, TKP HAKATAEKIMAE Meeting Room, Fukuoka, Japan, 2015-01-10.
  13. Sputtering Growth of ZnO-based semiconductors with Band Gap Tunability over the Entire Visible Spectrum (Invited), N. Itagaki, Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2014), Hapuna Beach Prince Hotel, Hawaii, United States of America, 2014-12-09.
  14. Sputteing Growth of High-Quality ZnO-based Semiconductors for Optoelectronic Applications (Invited), N. Itagaki, American Vacuum Society 61st International Symposium and Exhibition (AVS), Baltimore, Maryland, United States of America, 2014-11-13.
  15. 超高効率太陽電池への挑戦 ~量子効果を利用した新型太陽電池の実現に向けて~(招待講演), 板垣奈穂, 第25回精密加工プロセス研究会講演会, リファレンス駅東ビル, 福岡, 2014-10-09.
  16. Fabrication of Pseudo-binary ZnO-InN Alloys with Tunable Bandgap by Low-Temperature Magnetron Sputtering (Invited), N. Itagaki, 15th IUMRS-International Conference in Asia, Fukuoka University, Japan, 2014-08-29.
  17. Sputter-Deposition of Pseudobinary ZnO-InN Alloys with Tunable Bandgap for Photovoltaic Application (Invited), N. Itagaki, K. Matsushima, R. Shimizu, and T. Ide, International Conference on Microelectronics and Plasma Technology 2014 (ICMAP2014), Gunsan Saemangeum Convention Center, Gunsan, Korea, 2014-07-11.
  18. Novel oxynitride semiconductors for photovoltaic applications (太陽電池のための新規酸窒化物材料の探索), 板垣奈穂, 36th Seminar of Photovoltaic Power Generation Project (第36回平成26年度太陽光発電プロジェクト講演会 ), 宮崎大学, 2014-05-21.
  19. Sputtering growth of ZnO-based semiconductors using ZnON buffer layers for optoelectronic applications (Invited), N. Itagaki, The International Symposium on Plasma-Nano Materials and Processes, The Riverside Hotel, Seoul, Korea, 2014-04-03.
  20. 不純物添加結晶化法を用いた高品質ZnO薄膜のスパッタリング成膜」 -格子不整合基板上への単結晶膜の作製から極薄透明導電膜の作製まで- (招待講演), 板垣奈穂, スパッタリングおよびプラズマプロセス技術部会(SP部会) 第137回定例研究会 , 機械振興会館, 東京, 2014-03-13.
  21. Sputtering growth of single-crystalline ZnO-based semiconductors on lattice mismatched substrates (Invited), N. Itagaki, K. Matsushima, I. Suhariadi, D. Yamashita, H. Seo, G. Uchida, K. Koga, M. Shiratani, International Society for Optics and Photonics, Photonics West 2014, The Moscone Center, San Francisco, United States of America, 2014-02-03.
  22. ZnInON系太陽電池材料の探索 (招待講演), 板垣奈穂, 第5回薄膜太陽電池セミナー, 名古屋大学, 2013-11-15.
  23. Novel Approach to Sputtering Growth of Single Crystalline Oxide Semiconductors for Optoelectronic Applications (Invited), N. Itagaki, The 9th Asian-European International Conference on Plasma Surface Engineering (AEPSE2013), Ramada Plaza Jeju Hotel, Korea, 2013-08-28.
  24. Novel Application of Ar/N2 Discharges to Sputtering Growth of High Quality Oxide Semiconductors (Invited), N. Itagaki, The XXXI edition of the International Conference on Phenomena in Ionized Gases (ICPIG), Granada, Spain, 2013-07-18.
  25. Sputter Deposition of Semiconductor-Grade ZnO Based Materials on Lattice Mismatched Substrates (Invited), N. Itagaki, K. Kuwahara, K. Matsushima, K. Oshikawa, and I. Suarihadi, The Collaborative Conference on Materials Research 2013, Jeju, Korea, 2013-06-27.
  26. スパッタリングにおけるZnNOx膜の初期成長制御とグリーンデバイスへの展開 (招待講演), 板垣奈穂, 第112回研究会(153委員会,154委員会,131委員会合同研究会)プラズマ材料科学に基づいた薄膜形成と新プロセスの創出, 名古屋大学, 2013-06-20.
  27. Sputter deposition of atomically-flat ZnO films on lattice mismatched substrates via nitrogen mediated crystallization (Invited), N. Itagaki, K. Kuwahara, I. Suhariadi, K. Oshikawa, K. Matsushima, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani, The 16th International Workshop on Advanced Plasma Processing and Diagnostics, 自然科学研究機構 岡崎コンファレンスセンター, 2013-01-26.
  28. Novel fabrication method for ZnO films via nitrogen-mediated crystallization (Invited), N. Itagaki, K. Kuwahara, K. Matsushima, K. Oshikawa , SPIE (International society for optics and photonics) photonics west 2012, The Moscone Center, San Francisco, United States of America, 2012-01-22.
  29. "Novel fabrication method for transparent conducting oxide films utilizing solid-phase crystallized seed layers (Invited)", N. Itagaki, K. Kuwahara, and K. Nakahara, International Conference on Advances in Condensed and Nano Materials-2011(ICACNM-2011), Panjab University, India, 2011-02-24.
  30. Novel fabrication method for oxide semiconductors via atomic-additive mediated crystallization (Invited), N. Itagaki, International technical conference of IEEE Region 10, Fukuoka International Congress Center, Japan, 2010-11-23.
  31. Combinatorial sputtering of oxynitride semiconductors (Invited), N. Itagaki, 2010 International Workshop on Plasma Applications, 九州大学, 2010-06-04.
  32. Amorphous Oxide Semiconductor Based TFTs: Their Current Situation and Issues (Invited), N. Itagaki, S. Yaginuma, H. Omura, A. Goyal, A. Sato, M. Watanabe, M. Shimada, N. Kaji, K. Takahashi, M. Ofuji, T. Watanabe, H. Shimizu, K. Abe, Y. Tateishi, H. Yabuta, T. Iwasaki, R. Hayashi, T. Aiba, M. Sano and H. Kumomi, 第19回日本MRS学術シンポジウム(English Session), 横浜, 2009-12-01.

特許

国外

  1. EP2768029(欧州) N.Itagaki,G. Uchida, M. Shiratani "MULTI-QUANTUM WELL SOLAR CELL AND METHOD OF MANUFACTURING MULTI-QUANTUM WELL SOLAR CELL", 2016年10月登録
    ※他,韓国(KR101399441),中国(CN103999232), 台湾(TWI506802)で特許成立, 米国(US14/350,579)に特許出願.
  2. US8742412(米国),A. Goyal, N. Itagaki, T. Iwasaki, ”Thin film transistor and display”2014年6月3日登録.
    ※他,韓国(KR101201825), 中国(CN101933150), 台湾(TWI422942)で特許成立.欧州(EP2248179)に特許出願.
  3. US8164090(米国), T. Iwasaki, N. Itagaki, ”Field effect transistor and process for production thereof”, 2012年4月24日登録.
    ※他,欧州(EP2175493), 韓国(KR101224943), 中国(CN101719514)で特許成立.
  4. US8679650(米国), N. Itagaki, T. Iwasaki, K. Hoshino, “Substrate for growing wurtzite type crystal and method for manufacturing the same and semiconductor device”, 2014年3月25日登録.
    ※他,欧州(EP2175054), 韓国(KR101270519), 中国(CN10171948)で特許成立.
  5. US8415198(米国), N. Itagaki, T. Den, N. Kaji, R. Hayashi, M. Sano, “Production method of thin film transistor using amorphous oxide semiconductor film”, 2013年4月9日登録.
    ※他,韓国(KR101052240), 中国(CN101506986), 台湾(TWI377676)で特許成立, 欧州(EP2054939)に特許出願.
  6. TWI385807(台湾), T. Iwasaki, N. Itagaki, “Field effect transistor”, 2013年2月11日登録.
    ※他,中国(CN101897030)で特許成立, 米国(US2010224870)に特許出願 .
  7. US8314425(米国), T. Iwasaki, A. Goyal, N. Itagaki, “Field-effect transistor using amorphous oxide”, 2012年11月20日登録
    ※他,韓国(KR101186858), 中国(CN101926008), 台湾(TWI405334)で特許成立.欧州(EP2243164)に特許出願.
  8. US8274078(米国), N. Itagaki, T. Iwasaki, M. Watanabe, T. Den, “Metal oxynitride semiconductor containing zinc”, 2012年9月25日登録.
    ※他,中国(CN101663762),で特許成立.
  9. EP2197034(欧州), M. Ueda, T. Iwasaki, N. Itagaki, A. Goyal, “Field effect transistor and display apparatus”, 2012年9月19日登録.
    ※他,中国(CN101752428)で特許成立, 米国(US20090634319),韓国(KR20090121626)に特許出願.
  10. US8212248(欧州), N. Itagaki, T. Iwasaki, “Amorphous oxide and field effect transistor”, 2012年7月3日登録.
    ※他,欧州(EP2240965), 中国(CN101911304), 台湾(TWI433312)で特許成立.
  11. US8188471(米国), T. Iwasaki, N. Itagaki, “Field-effect transistor”, 2012年5月29日登録.
    ※他,欧州(EP2193547), 韓国(KR101352159), 中国(CN101796644),で特許成立.
  12. US8188467(米国), N. Itagaki, T. Iwasaki, “Amorphous oxide and field effect transistor”, 2012年5月29日登録.
    ※他,欧州(EP2165368), 韓国(KR101294113), 中国(CN101681922), 台湾(TWI397183)で特許成立.
  13. US8084307(米国), *N. Itagaki, T. Iwasaki, T. Den, “Method for manufacturing thin film transistor”, 2011年12月27日登録.
    ※他,韓国(KR101052421), 中国(CN101548388)で特許成立, 欧州(EP2084749), 台湾(TW200837959)に特許出願.
  14. US7768031(米国), N. Itagaki, T. Oike, T. Iwasaki, T. Den, “Light emitting device and method of producing a light emitting device”, 2010年8月3日登録.
  15. KR100973124(韓国), T. Iwasaki, T. Den, N. Itagaki, ”Field-effect transistor”, 2010年7月29日登録.
    ※他,中国(CN101263605), 台湾(TWI323926)で特許成立, 米国(US2009189153), 欧州(EP2149910)に特許出願.
  16. US 61/415084, "ZINC OXIDE FILM AND ITS MANUFACTURING METHOD", N.Itagaki,M. Shiratani,K. Koga,G. Uchida,K. Kamataki, 2010年11月出願
  17. US 61/377538, "ZINC OXIDE BASED TRANSPARENT CONDUCTIVE FILM, AND ITS MANUFACTURING", N.Itagaki,M. Shiratani,K. Koga,G. Uchida,K. Kamataki, 2010年8月出願

国内

  1. 特許5366279号, 板垣奈穂, 白谷正治, 内田儀一郎, "多重量子井戸型太陽電池および多重量子井戸型太陽電池の製造方法", 2013年9月登録
  2. 特許第5538797号,上田 未紀,岩崎達哉,板垣奈穂,ゴヤルアミタ,”電界効果型トランジスタおよび表示装置,2014年7月2日登録.
  3. 特許第5393058号, 岩崎達哉, 板垣奈穂, “電界効果型トランジスタ”, 2014.1.22登録.
  4. 特許第5451280号,板垣奈穂,岩崎達哉,星野勝之,”ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置” 2014年1月10日登録.
  5. 特許第5430113号, 岩崎達哉, 板垣奈穂, ”電界効果型トランジスタ及びその製造方法”,2013年12月13日登録.
  6. 特許第5241143号, 板垣奈穂, 岩崎達哉, ”電界効果型トランジスタ”,2013年7月17日登録.
  7. 特許第5219529号, 岩崎達哉,ゴヤルアミタ,板垣奈穂, “電界効果型トランジスタ及び,該電界効果型トランジスタを備えた表示装置”, 2013年6月26日登録.
  8. 特許第5213458号, 板垣奈穂, ゴヤル アミタ, 岩崎達哉, “アモルファス酸化物及び電界効果型トランジスタ”,2013年6月19日登録.
  9. 特許第5219529号,岩崎達哉, ゴヤル アミタ, 板垣奈穂, ”電界効果型トランジスタ”, 2013年3月15日登録.
  10. 特許第5213507号, 板垣奈穂, 岩崎達哉, 渡邉壮俊, 田透, “薄膜トランジスタ”, 2013年3月8日登録.
  11. 特許第5213429号, 岩崎達哉, 板垣奈穂, “電界効果型トランジスタ”, 2013年3月8日登録.
  12. 特許第5127183号, 板垣奈穂, 田透, 加地信幸, 林享, 佐野政史, “アモルファス酸化物半導体膜を用いた薄膜トランジスタの製造方法”, 2013年1月23日登録.
  13. 特許第5116290号, 板垣奈穂, 岩崎達哉, 田透, “薄膜トランジスタの製造方法”, 2013年1月9日登録.
  14. 特許第5049503号, 板垣奈穂, 大池 智之, 岩崎達哉, 田透, “発光素子及び発光素子の製造方法”, 2012年10月17日登録.
  15. 特許第5084160号, 板垣奈穂, 饗場 利明, “薄膜トランジスタ及び表示装置”, 2012年9月14日登録.
  16. 特許第5006598号, 板垣奈穂, 岩崎達哉, 田透, “電界効果型トランジスタ”, 2012年6月1日登録.
  17. 特許第4880951号, 板垣奈穂, 岩崎達哉, “半導体素子”, キヤノン株式会社, 2011年12月9日登録
  18. PCT/JP2011/069348, "ZnO膜の製造方法,透明導電膜の製造方法,ZnO膜,及び透明導電膜", 板垣奈穂,鎌滝晋礼,内田儀一郎,古閑一憲,白谷正治, 2013年3月出願
  19. 特願2009-15692, ゴヤル アミタ, 岩崎達哉, 板垣奈穂, “薄膜トランジスタ及び表示装置”, 2009年1月27日出願

表彰

  1. 第7回 (平成28年度) 九州大学大学院システム情報科学府優秀学生表彰, 松島宏一(博士), 2017年 3月
  2. プラズマ・核融合学会九州・沖縄・山口支部 第20回支部大会 / 講演奨励賞, 宮原奈乃華(博士), 2017年 3月
  3. 26th Annual Meeting of MRS-J / Award for Encouragement of Research, 宮原奈乃華(博士), 2016年 12月
  4. 平成28年度九州表面・真空研究会2016 / 学生講演奨励賞, 高崎俊行(修士), 2016年 6月
  5. 第14回プラズマエレクトロニクス賞 (応用物理学会プラズマエレクトロニクス分科会), 板垣奈穂, 2016年 3月
  6. さきがけ「太陽光と光電変換機能」研究領域 総括賞, 板垣奈穂, 2015年 1月
  7. 平成26年度応用物理学会九州支部学術講演会 / 発表奨励賞, 高崎俊行(学部), 2014年 12月
  8. The 9th Asian-European International Conference of Plasma Surface Engineering(AEPSE2013)/ Outstanding Poster Award, 板垣奈穂, 2013年 8月
  9. 第15回プラズマ材料科学賞奨励部門賞 (日本学術振興会プラズマ材料科学第153委員会), 板垣奈穂, 2013年 8月
  10. International Symposium on Sputtering and Plasma Processes 2013 (ISSP2013) / Best Poster Award, 板垣奈穂, 2013年 7月
  11. 第3回 (平成24年度) 九州大学大学院システム情報科学府優秀学生表彰, 桑原和成(修士), 2013年 3月
  12. 平成24年度応用物理学会九州支部学術講演会 / 発表奨励賞, 押川晃一郎(修士), 2012年 12月
  13. 11th APCPST&25th SPSM / Advanced Plasma Application Award, 板垣奈穂, 2012年 10月
  14. IUMRS-ICEM2012 / Award for Encouragement of Research in Materials Science, 桑原和成(修士), 2012年 9月

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